KSM2614 200v n-channel powertrench mosfet general description this n-channel mosfet is produced using kersemi semicon - ductor?s advanced powertrenc h process that has been espe - cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? pdp application description ? 62a, 200v, r ds(on) = 22.9m @v gs = 10 v ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant absolute maximum ratings thermal characteristics d g s to-220 symbol parameter ratings unit v ds drain-source voltage 200 v v gs gate-source voltage 30 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 62 39.3 a a i dm drain current - pulsed (note 1) see figure 9 a e as single pulsed avalanche energy (note 2) 145 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 260 2.1 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.48 c/w r ja thermal resistance, junction-to-ambient -- 62.5 c/w 2014-6-30 1 www.kersemi.com
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1mh, i as = 17a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 62a, di/dt 100a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity KSM2614 KSM2614 to-220 - - 50 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 200 -- -- v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.2 -- v/ c i dss zero gate voltage drain current v ds = 200v, v gs = 0v v ds = 200v, v gs = 0v, t j = 125 c -- -- -- -- 10 500 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 4.0 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 31a -- 22.9 27 m g fs forward transconductance v ds = 10v, i d = 31a (note 4) -- 72 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v f = 1.0mhz -- 5435 7230 pf c oss output capacitance -- 505 675 pf c rss reverse transfer capacitance -- 110 165 pf switching characteristics t d(on) turn-on delay time v dd = 100v, i d = 62a v gs = 10v, r gen = 25 (note 4, 5) -- 77 165 ns t r turn-on rise time -- 284 560 ns t d(off) turn-off delay time -- 103 220 ns t f turn-off fall time -- 162 335 ns q g total gate charge v ds = 100v, i d = 62a v gs = 10v (note 4, 5) -- 76 99 nc q gs gate-source charge -- 35 -- nc q gd gate-drain charge -- 18 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 62 a i sm maximum pulsed drain-source diode forward current -- -- 186 a v sd drain-source diode forward voltage v gs = 0v, i s = 62a -- -- 1.2 v t rr reverse recovery time v gs = 0v, i s = 62a di f /dt =100a/ s (note 4) -- 145 -- ns q rr reverse recovery charge -- 0.81 -- c KSM2614 package marking and ordering information 2014-6-30 2 www.kersemi.com
figure 1. on-region characteristics figure 2. transfer characteristics figure 3. o n - r e s i s t a n c e v a r i a t i o n v s . d r a i n current and gate voltage figure 4. body diode forward voltage varia - tion vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 100 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 500 2468 1 10 100 1000 -55 o c 150 o c * notes : 1. v ds = 10v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 50 100 150 200 0.02 0.03 0.04 0.05 0.06 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.015 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 * notes : 1. v gs = 0v 2. i d = 250 a t a = 25 o c t a = 150 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 0.1 1 10 0 3000 6000 9000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 20406080100 0 2 4 6 8 10 * note : i d = 62a v ds = 40v v ds = 100v v ds = 160v v gs , gate-source voltage [v] q g , total gate charge [nc] KSM2614 2014-6-30 3 www.kersemi.com
figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. tem- perature figure 9. maximum safe operating area figure 10. maximum drain current vs. case - temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10v 2. i d = 31a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 1000 dc 10 ms 1ms 100 s i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 400 25 50 75 100 125 150 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 10 0 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.48 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 KSM2614 2014-6-30 4 www.kersemi.com
gate charge test circuit & waveform resistive switching t est circuit & waveforms unclamped inductiv e switching test circuit & waveforms KSM2614 2014-6-30 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms KSM2614 2014-6-30 6 www.kersemi.com
mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 KSM2614 2014-6-30 7 www.kersemi.com
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